features metal-semicondutcor junction with guard ring. epitaxial construction. low forward voltage drop,low switching losses. high surge capacity. for use in low voltage,high frequency inverters free wheeling,and polarity pr otection applications. maximum rating operating temperature range app lies unless otherwise specified symbol parameter mbr20150ct MBR20200CT unit v rrm recurrent peak reverse voltage 150 200 v v rms rms reverse voltage 105 140 v v dc dc blocking voltage 150 200 v i (av) average forward total device rectified current @t a =100 20 a i fsm peak forward surge current 8.3ms single half sine-wave superimosed on rated load 150 a r jc typical thermal resistance junction to case (note 1) 1.5 /w t j t stg operating junction and stor agetem-perature range -55 to +150 electrical characteristics @ ta=25 unless otherwise specified mbr20150ct MBR20200CT parameter symbol test conditions max unit reverse current i r v r =v rrm ,t a =25 v r =v rrm ,t a =125 0.1 50 ma forward voltage v f i f =10a 0.90 0.95 v pb lead-free http://www.luguang.cn mail:lge@luguang.cn mbr20150ct,MBR20200CT sckottky barrier rectifier 1 3 2 10 . 2 0 . 2 |? 3 . 8 0 . 1 5 2. 8 0. 1 19 . 0 0. 5 pi n 3. 5 0. 3 0. 9 0. 1 2. 5 0. 1 1 3 .8 0 .5 2. 6 0. 2 0. 5 0. 1 8. 9 0. 2 1. 4 0. 2 4 . 5 0. 2 di m en s i o ns i n m i lli m ete rs to-220ab
typical characteristics @ ta=25 unless otherwise specified http://www.luguang.cn mail:lge@luguang.cn mbr20150ct,MBR20200CT sckottky barrier rectifier
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